1996. 12. 18 1/2 semiconductor technical data KTB988 epitaxial planar pnp transistor revision no : 1 general purpose application. features low collector saturation voltage : v ce(sat) =-1.0v(max.) at i c =-3a, i b =-0.3a. collector power dissipation : p c =30w (tc=25 1 ). complementary to ktd1351. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification o:60 120 , y:100 200 , gr:150 300 characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -3 a base current i b -0.5 a collector power dissipation ta=25 1 p c 2.0 w tc=25 1 30 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-60v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-7v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-50ma, i b =0 -60 - - v dc current gain h fe (1) (note) v ce =-5v, i c =-0.5a 60 - 300 h fe (2) v ce =-5v, i c =-3a 20 - - collector-emitter saturation voltage v ce(sat) i c =-3a, i b =-0.3a - -0.5 -1.0 v base-emitter voltage v be v ce =-5v, i c =-0.5a - -0.7 -1.0 v transition frequency f t v ce =-5v, i c =-0.5a - 9 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 150 - pf switching time turn-on time t on - 0.4 - s storage time t stg - 1.7 - fall time t f - 0.5 - i b1 15 ? b1 i cc v =-30v i b2 i b2 20 sec -i =i =0.2a 1% b1 b2 output duty cycle input 0 < =
1996. 12. 18 2/2 KTB988 revision no : 1 -0.02 ce(sat) collector current i (a) v - i collector-emitter saturation c -0.02 -0. 1 -0.3 -1 -3 1 i - v c ce ce collector-emitter voltage v (v) -1 -2 c 0 collector current i (a) -1 h - i fe c c collector current i (a) -0.02 fe dc current gain h 30 transient thermal resistance 1 th(t) 10 10 1 time t (sec) th(t) r - t collector current i (a) c -0.1 -5 -1 collector-emitter voltage v (v) ce safe operating area 10 collector power dissipation p (w) 0 c 150 50 0 ambient temperature ta ( c) pc - ta -3 -4 -5 -6 -2 -3 common emitter tc=25 c i =-10ma b -20 -30 -40 -50 -70 -80 0 -60 r ( c/w) -3 -2 10 10 -1 2 10 0.1 100 10 (1) without heat sink (2) infinite heat sink (1) ta=2 5 c (2) tc=25 c -0.1 -0.3 -1 -3 50 300 500 100 common emitter v =-5v ce tc=100 c tc=25 c tc=-25 c 100 200 20 30 40 tc=ta 1 infinite heat sink 300x300x2mm al heat sink 2 3 heat sink 200x200x2mm al 100x100x1mm al heat sink 4 5 heat sink 100x100x1mm fe 50x50x1mm al heat sink 6 7 heat sink 50x50x1mm fe no heat sink 8 1 2 3 4 5 6 7 8 c voltage v (v) ce(sat) -0.05 -0.1 -0.3 -0.5 -1 common emitter i /i =10 c b t c =10 0 c t c=25 c tc=-25 c -3 -10 -30 -50 -100 -0.3 -0.5 -1 -3 -5 -0.5 single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c i max (continuous) c dc ope ration tc=25 c v (max) ceo 1m s 10ms 100ms 1s
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